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| FDZ4670 N-Channel PowerTrench(R)MOSFET BGA May 2007 FDZ4670 N-Channel PowerTrench MOSFET BGA 30V, 25A, 2.5m Features Max rDS(on) = 2.5m at VGS = 10V, ID = 25A Max rDS(on) = 4.5m at VGS = 4.5V, ID = 18.5A Ultra-thin package: less than 0.85mm height when mounted to PCB Outstanding thermal transfer characteristics Ultra-low gate charge x rDS(on) product RoHS Compliant (R) tm General Description Combining Farichild's 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS(on). This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. Applications DC - DC Conversion POL converters Index slot D G Bottom FLFBGA 3.5X4.0 Top S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 30 20 25 60 2.5 1.25 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) 50 100 0.85 C/W Package Marking and Ordering Information Device Marking 4670 Device FDZ4670 Package FLFBGA 3.5X4.0 1 Reel Size 13'' Tape Width 12mm Quantity 3000 units www.fairchildsemi.com (c)2007 Fairchild Semiconductor Corporation FDZ4670 RevD FDZ4670 N-Channel PowerTrench(R)MOSFET BGA Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 -30 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 25A VGS = 4.5V, ID = 18.5A VGS = 10V, ID = 25A, TJ = 125C VDD= 10V, ID = 25A 1 1.7 4.4 1.9 3.0 2.6 114 2.5 4.5 3.8 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2660 1440 180 1.0 3540 1920 270 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 10V, VDD = 15V, ID = 25A VDD = 15V, ID = 1.0A, VGS = 10V, RGEN = 6 15 11 50 67 40 7 6 27 20 80 107 56 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.8A (Note 2) 0.7 46 28 1.2 69 42 V ns nC IF = 25A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJCis determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 100C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 2 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench(R)MOSFET BGA Typical Characteristics TJ = 25C unless otherwise noted 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V 4.5 VGS = 6V VGS = 4.5V VGS = 3.5V VGS = 3V 50 ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VGS = 3V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 40 30 20 10 0 0.0 VGS = 3.5V VGS = 4.5V VGS = 6V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 10V 0.5 0 10 20 30 40 50 60 ID, DRAIN CURRENT(A) 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 SOURCE ON-RESISTANCE (m) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 ID = 25A VGS = 10V 9 8 7 6 5 4 3 2 1 2 ID = 25A PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 rDS(on), DRAIN TO TJ = 125oC TJ = 25oC 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 60 50 ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 0V 10 TJ = 125oC TJ = 25oC VDS = 5V 40 30 20 10 TJ = -55oC TJ = 125oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 3 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench(R)MOSFET BGA Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 25A 8000 VDD = 10V VDD = 15V 8 6 4 2 0 0 5 10 15 Ciss CAPACITANCE (pF) 1000 Coss VDD = 20V Crss f = 1MHz VGS = 0V 20 25 30 35 40 45 100 0.1 1 10 30 Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 2000 1000 100 P(PK), PEAK TRANSIENT POWER (W) 1ms ID, DRAIN CURRENT (A) VGS = 10V 10 10ms SINGLE PULSE RJA = 100oC/W TA = 25oC 100 1 THIS AREA IS LIMITED BY rDS(on) 100ms 1s 10s DC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 100 C/W TA = 25oC o 10 0.01 0.01 0.1 1 10 100 1 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0 1 2 3 SINGLE PULSE RJA = 100 C/W o 0.01 -3 10 10 -2 10 -1 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 4 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench(R)MOSFET BGA Dimensional Outline and Pad Layout (c)2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 5 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench(R)MOSFET BGA tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM tm TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I27 (c)2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D www.fairchildsemi.com |
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